In terms of chip output, Samsung wants to keep up with TSMC. To do this, the Korean phone manufacturer may begin manufacturing third-generation (3nm) chips as early as next week, although TSMC is anticipated to do so later in 2022.
In comparison to Samsung’s 5nm technology, which was utilised for both the Snapdragon 888 and the Exynos 2100, the 3nm node is anticipated to offer a 35 percent size reduction, a 30 percent performance boost, and a 50 percent higher power efficiency.
The transition from FinFET designs to Gate-All-Around (GAA) designs for transistors will be used to achieve these gains. It enables the foundry to further reduce transistor size without compromising current carrying capacity. The graphic below displays the various designs. Additionally, it displays the most recent GAAFET design used for the MBCFET flavour in the 3nm node.
US President Joe Biden attended a Samsung event last month to showcase its 3nm technology. According to rumours from the previous year, Samsung intends to invest $10 billion in a 3nm foundry in Texas. Since then, the investment has increased to $17 billion, and the foundry is anticipated to begin operations in 2024.
The yield, which is used for the Snapdragon 8 Gen 1 processor and has been a source of concern for Samsung, is the main issue with a new node. Qualcomm turned to TSMC from Samsung for its SD8G1 chips due to the low yield.
In addition, the company’s roadmap calls for the production of 2nm chips by 2025 and second-generation 3nm nodes by 2023.